SK hynix shows HBM4E and SOCAMM2 at TSMC OIP, wins Partner of the Year again

A booth built around memory for AI

The conference was held on the 23rd (local time) in Santa Clara. OIP is an open innovation platform run by TSMC to develop technologies and collaborate with the companies that make up the semiconductor ecosystem. According to SK hynix, TSMC invites OIP member companies and major customers each year in the second half to ecosystem forums around the world. SK hynix has taken part in the OIP Forums since 2024.

The company's booth carried the slogan "The Memory behind the Intelligence at Scale". SK hynix says the message reflects an industrywide trend: as AI advances and its fields of application expand, sustaining that growth depends on memory technology. The exhibition covered several layers of AI computation and data storage, from HBM to server DRAM and eSSD.

SK hynix also describes a shift in the industry. Design and manufacturing, and memory and logic, were once each optimized within their own domains. Now, the company says, firms design and validate together from the earliest stages.

HBM, SOCAMM2 and server products on display

The HBM stand showed NVIDIA's superchip "Vera Rubin" with SK hynix's 12-layer 36GB HBM4 and 96GB SOCAMM2 mounted on it. According to SK hynix, the HBM4 is integrated around the Rubin GPU core and serves as a high-bandwidth data pathway that resolves data transfer latency in complex matrix operations. SOCAMM2, a memory module for AI servers based on low-power DRAM, operates as the main system memory for the Vera CPU. The company says this helps AI agents reflect the context of long conversations in their responses.

Next to the superchip, SK hynix arranged these products:

• 12-layer 48GB HBM4E
• 16-layer 48GB HBM4
• 12-layer 36GB HBM3E
• a 192GB SOCAMM2 unit

The server DRAM display included the 256GB 3DS RDIMM, which SK hynix says achieves the industry's largest capacity tailored to AI workloads. It also featured the high-bandwidth 128GB MRDIMM and the 64GB RDIMM, which the company calls the world's first to apply a 10-nanometer class sixth-generation (1c) process.

On the SSD stand were the PEB210 E1.S, the PS1101 E3.S and the PEB210 M.2. The PEB210 E1.S supports Direct Liquid Cooling and drew strong interest from customers operating data centers, according to SK hynix. The PS1101 E3.S, the company's first QLC-based eSSD, prompted a steady stream of inquiries from enterprise customers.

Partner of the Year for HBM5 and CoWoS work

SK hynix was named a Partner of the Year winner in the "3DFabric-HBM Integration" category, its second win in a row. The award recognized a collaboration that validated HBM5 on the basis of TSMC's CoWoS, a 2.5D advanced packaging technology used to integrate chips such as HBM and GPUs onto a single substrate. Team Leader Jinwoo Park and Vice President Jaesik Lee, Head of Advanced PKG Research, accepted the award on the company's behalf.

The company explains that as HBM gains stack count and bandwidth through successive generations, realizing those gains requires close coordination with advanced packaging. SK hynix's Package Development organization and TSMC carried out validation together from the earliest stages, which the company says led to the award.

Presentation and what it signals

In the presentation session, Daesik Park, a distinguished engineer in PCIe Design, spoke second in a joint presentation with Cadence. The theme was "PCI Express Solutions for HPC/AI Storage", covering market trends and SK hynix's response.

SK hynix says its booth saw a constant flow of industry professionals, and that company representatives visited to review its development plans and technological capabilities and to propose new collaborations. The event shows memory makers and foundry partners working more closely on AI hardware, with HBM validation on packaging platforms such as CoWoS now a joint effort from an early stage.