GaNrich Expands GaN Power Device Line to Cover 40V to 1200V

A full voltage range on two wafer platforms

According to GaNrich, it has completed both GaN-on-Si and GaN-on-Sapphire wafer platforms. Its portfolio spans 40V to 250V low-mid voltage devices and 650V to 1200V high voltage devices. The company lists target applications including AI data centers, Backup Battery Units (BBUs), robotics, drones, electric vehicles (EVs) and On-Board Chargers (OBCs).

GaNrich says its products combine high-speed switching, low conduction loss and low parasitic capacitance, which it argues gives engineers more flexibility to optimize efficiency and power density. The company also describes itself as a full-service provider, offering mask design, advanced packaging, system module integration and reliability testing.

GaNrich calls itself one of the few suppliers globally with full voltage range GaN coverage, and currently the only GaN designer able to provide mass production GaN product for customer validation in Taiwan. These are the company's own claims.

Low-mid and high voltage devices

For the 40V to 250V range, GaNrich says it offers advanced package solutions compatible with existing standard silicon devices. It reports leading the way in completing 5×6, 5×3 and 3×3 product development and supply-chain optimization, and says it targets applications where traditional silicon devices have reached their performance limits. Gate drivers can also be integrated into the same package, which the company says simplifies circuit design and speeds up customer adoption.

The 650V to 1200V devices are aimed at high-voltage power conversion, including high-power AI data center power supplies, AC-DC conversion and EVs. GaNrich says the range supports different power topologies, from low-mid voltage DC-DC and DC-AC conversion to high voltage AC-DC and DC-DC conversion. To reduce design effort, its devices offer pin-to-pin drop-in replacements for traditional silicon components.

The company also notes that as power topologies evolve, certain GaN devices can enter application segments served by silicon carbide (SiC). GaNrich plans to launch a 1200V bidirectional switching (BDS) product that it says can reduce system component count while increasing voltage design margin. According to the company, this enables single-stage power-conversion architecture and meets the requirements of next-generation power topologies. No launch date was given.

A non-red supply chain and customer validation

GaNrich frames its supply chain as a selling point. It states that the global GaN market is currently highly concentrated in China-based supply chains, while European and U.S. customers still have demand for new in-house capacity. The company says it coordinates Taiwan GaN wafer manufacturing and packaging resources and works with global partners to build a product-development ecosystem. The aim, according to GaNrich, is to give customers a competitive and diverse non-red supply chain option.

On adoption, the company says its GaN products are steadily entering global markets. Selected products have been validated by leading global customers, with applications in automotive, energy storage and industrial sectors. GaNrich says this demonstrates competitiveness in performance, reliability, capacity and manufacturability. The release does not name the customers or provide performance figures.

What it means for buyers

For power-electronics designers, the announcement signals another supplier offering GaN across low, mid and high voltages, with drop-in packaging meant to ease the switch from silicon. For buyers in Europe and the U.S. looking to diversify away from China-based GaN supply, GaNrich is positioning Taiwan-based production as an alternative. The claims come from the company itself, and the 1200V bidirectional switching product remains a plan rather than a shipping item. Interested customers can contact the GaNrich sales team through the details given in the release.