GaNrich Expands GaN Power Device Lineup to Cover 40V to 1200V

A portfolio from low-mid to high voltage

GaNrich describes itself as a Taiwan-based company dedicated to GaN technology. The company says it has accomplished both GaN-on-Si and GaN-on-Sapphire wafer platforms. Its portfolio covers 40V to 250V low-mid voltage devices and 650V to 1200V high voltage devices.

The applications named by the company include AI data centers, Backup Battery Units (BBUs), robotics, drones, electric vehicles (EVs) and On-Board Chargers (OBCs). GaNrich says its products offer high-speed switching, low conduction loss and low parasitic capacitance, which it argues gives designers more flexibility to optimize efficiency and power density.

Beyond devices, the company says it works as a full-service provider, offering mask design, advanced packaging, system module integration and reliability testing. GaNrich also calls itself one of the few suppliers globally with full voltage range GaN coverage, and currently the only GaN designer that can provide mass production GaN product for customer validation in Taiwan.

Drop-in packages and a planned 1200V bidirectional switch

For the 40V to 250V range, GaNrich says it offers advanced package solutions compatible with existing standard silicon devices. It says it led in completing 5×6, 5×3 and 3×3 product development and supply-chain optimization, and aims at applications where traditional silicon devices have reached their performance limits. Integrating gate drivers into the same package is meant to simplify circuit design and speed up customer adoption.

The 650V to 1200V devices address high-voltage power conversion, including high-power AI data center power supplies, AC-DC conversion and EVs. The company says these devices offer pin-to-pin drop-in replacements for traditional silicon components, to minimize design effort. It says its solutions cover topologies from low-mid voltage DC-DC/DC-AC conversion to high voltage AC-DC/DC-DC conversion.

GaNrich also notes that as power topologies evolve, certain GaN devices can enter segments served by silicon carbide (SiC). It plans to launch a 1200V bidirectional switching (BDS) product that, according to the company, can reduce system component count while increasing voltage design margin. This would enable single-stage power-conversion architecture for next-generation topologies.

A non-red supply chain and customer validation

The company argues that the global GaN market is currently highly concentrated in China-based supply chains, while demand remains from European and U.S. customers for new in-house capacity. GaNrich says it coordinates Taiwan GaN wafer manufacturing and packaging resources and works with global supply-chain partners, offering what it calls a competitive and diverse non-red supply chain option.

GaNrich states that selected products have been validated by leading global customers in automotive, energy storage and industrial sectors. It presents this as evidence of competitiveness in performance, reliability, capacity and manufacturability. The claims come from the company's own announcement, and no customer names or performance figures were given.

What it means for buyers

For power-system designers, the pitch is a single supplier covering a wide voltage span, with silicon-compatible packaging and integrated gate drivers intended to ease the move to GaN. For buyers in Europe and the U.S., the company positions its Taiwan-based manufacturing as an alternative to supply chains concentrated in China. Interested customers can reach the GaNrich sales team at [email protected].