GaNrich expands GaN power chip range to cover 40 V to 1200 V

A full voltage range on two wafer platforms

According to GaNrich, its portfolio covers low and medium voltage devices (40 V to 250 V) and high voltage devices (650 V to 1200 V). The company names AI data centers, battery backup units (BBU), robotics, drones, electric vehicles (EV) and onboard chargers (OBC) as target applications.

GaNrich says its products combine high-speed switching, low conduction loss and low parasitic capacitance, which gives designers more flexibility to optimize both efficiency and power density. The company also describes itself as an integrated service provider, offering mask design, advanced packaging, system module integration and reliability testing.

GaNrich claims to be one of the few suppliers worldwide with complete GaN product coverage across this voltage range. It also says it is currently the only GaN solution designer in Taiwan able to supply products for customer validation in a mass production environment.

Drop-in packaging and a planned 1200 V bidirectional switch

For the 40 V to 250 V devices, GaNrich offers advanced packaging that is compatible with existing standard silicon devices. The company says it has completed development of products in 5×6, 5×3 and 3×3 formats, along with optimization of its supply chain. It aims at applications where traditional silicon devices have reached their performance limits. Gate drivers are integrated in the same package, which the company says simplifies circuit design for customers.

The 650 V to 1200 V devices target high voltage power conversion, including high-power supplies for AI data centers, AC-DC conversion and electric vehicles. GaNrich says its range suits different power topologies, from low and medium voltage AC-DC or DC-AC conversion to high voltage AC-DC or DC-DC conversion. To reduce design effort, the devices allow pin-to-pin replacement of traditional silicon components.

The company adds that, as power topologies evolve, certain GaN devices can move into application segments traditionally served by silicon carbide (SiC). GaNrich plans to launch a 1200 V bidirectional switching device (BDS). According to the company, it can reduce the number of system components while increasing voltage margin in the design, and it supports a single-stage power conversion architecture for next-generation topologies.

Supply chain independent of China

GaNrich states that the global GaN market is currently highly concentrated in China-based supply chains, while European and American customers continue to ask for new production capacity of their own. The company says it coordinates wafer fabrication and packaging resources in Taiwan and works with supply chain partners worldwide to build a full product development ecosystem. The goal, it says, is to give international customers a competitive and diversified alternative independent of China-based supply chains.

Customer validation and what it means

GaNrich reports that several of its products have been validated by leading global customers, with applications in automotive, energy storage and industrial sectors. The company says this shows the competitiveness of its GaN products in performance, reliability, supply capacity and manufacturability. The announcement does not name the customers or give performance figures, so these claims remain the company's own.

For buyers in power electronics, the announcement points to another source of GaN devices from Taiwan, with silicon-compatible packages and pin-to-pin replacement meant to ease adoption. The planned 1200 V bidirectional switch has no launch date in the announcement.